? semiconductor components industries, llc, 2013 september, 2013 ? rev. 5 1 publication order number: nss35200mr6/d nss35200mr6t1g 35 v, 5 a, low v ce(sat) pnp transistor on semiconductor?s e 2 poweredge family of low v ce(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (v ce(sat) ) and high current gain capability. these are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. typical application are dc ? dc converters and power management in portable and battery powered products such as cellular and cordless phones, pdas, computers, printers, digital cameras and mp3 players. other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. in the automotive industry they can be used in air bag deployment and in the instrument cluster. the high current gain allows e 2 poweredge devices to be driven directly from pmu?s control outputs, and the linear gain (beta) makes them ideal components in analog amplifiers. features ? s prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free and are rohs compliant* maximum ratings (t a = 25 c) rating symbol max unit collector-emitter voltage v ceo ? 35 vdc collector-base voltage v cbo ? 55 vdc emitter-base voltage v ebo ? 5.0 vdc collector current ? continuous i c ? 2.0 adc collector current ? peak i cm ? 5.0 a electrostatic discharge esd hbm class 3 mm class c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. http://onsemi.com collector 1, 2, 5, 6 3 base 4 emitter 35 volts 5.0 amps pnp low v ce(sat) transistor equivalent r ds(on) 100 m device package shipping ? ordering information nss35200mr6t1g tsop ? 6 (pb ? free) tsop ? 6 case 318g style 6 3,000 / tape & reel marking diagram ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. vs8 m vs8 = device code m = date code* = pb ? free package (*note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. SNSS35200MR6T1G tsop ? 6 (pb ? free) 3,000 / tape & reel 1 2 3 4 5 6
nss35200mr6t1g http://onsemi.com 2 thermal characteristics characteristic symbol max unit total device dissipation t a = 25 c derate above 25 c p d (note 1) 625 5.0 mw mw/ c thermal resistance, junction ? to ? ambient r ja (note 1) 200 c/w total device dissipation t a = 25 c derate above 25 c p d (note 2) 1.0 8.0 w mw/ c thermal resistance, junction ? to ? ambient r ja (note 2) 120 c/w thermal resistance, junction ? to ? lead #1 r jl 80 c/w total device dissipation (single pulse < 10 sec.) p dsingle (notes 2 & 3) 1.75 w junction and storage temperature range t j , t stg ? 55 to +150 c 1. fr ? 4 @ minimum pad. 2. fr ? 4 @ 1.0 x 1.0 inch pad. 3. refer to figure 8.
nss35200mr6t1g http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typical max unit off characteristics collector ? emitter breakdown voltage (i c = ? 10 madc, i b = 0) v (br)ceo ? 35 ? 45 ? vdc collector ? base breakdown voltage (i c = ? 0.1 madc, i e = 0) v (br)cbo ? 55 ? 65 ? vdc emitter ? base breakdown voltage (i e = ? 0.1 madc, i c = 0) v (br)ebo ? 5.0 ? 7.0 ? vdc collector cutoff current (v cb = ? 35 vdc, i e = 0) i cbo ? ? 0.03 ? 0.1 adc collector ? emitter cutoff current (v ces = ? 35 vdc) i ces ? ? 0.03 ? 0.1 adc emitter cutoff current (v eb = ? 4.0 vdc) i ebo ? ? 0.01 ? 0.1 adc on characteristics dc current gain (note 4) (i c = ? 1.0 a, v ce = ? 1.5 v) (i c = ? 1.5 a, v ce = ? 1.5 v) (i c = ? 2.0 a, v ce = ? 3.0 v) h fe 100 100 100 200 200 200 ? 400 ? collector ? emitter saturation voltage (note 4) (i c = ? 0.8 a, i b = ? 0.008 a) (i c = ? 1.2 a, i b = ? 0.012 a) (i c = ? 2.0 a, i b = ? 0.02 a) v ce(sat) ? ? ? ? 0.125 ? 0.175 ? 0.260 ? 0.15 ? 0.20 ? 0.31 v base ? emitter saturation voltage (note 4) (i c = ? 1.2 a, i b = ? 0.012 a) v be(sat) ? ? 0.68 ? 0.85 v base ? emitter turn ? on voltage (note 4) (i c = ? 2.0 a, v ce = ? 3.0 v) v be(on) ? ? 0.81 ? 0.875 v cutoff frequency (i c = ? 100 ma, v ce = ? 5.0 v, f = 100 mhz) f t 100 ? ? mhz input capacitance (v eb = ? 0.5 v, f = 1.0 mhz) cibo ? 600 650 pf output capacitance (v cb = ? 3.0 v, f = 1.0 mhz) cobo ? 85 100 pf turn ? on time (v cc = ? 10 v, i b1 = ? 100 ma, i c = ? 1 a, r l = 3 ) t on ? 35 ? ns turn ? off time (v cc = ? 10 v, i b1 = i b2 = ? 100 ma, i c = 1 a, r l = 3 ) t off ? 225 ? ns 4. pulsed condition: pulse width = 300 sec, duty cycle 2%.
nss35200mr6t1g http://onsemi.com 4 figure 1. collector emitter saturation voltage versus collector current figure 2. collector emitter saturation voltage versus collector current i c , collector current (a) i c , collector current (amps) 0.1 1.0 0.001 0.05 0 0.01 0.10 0.15 t a = 150 c 0.20 0.25 100 c 25 c ? 55 c i c /i b = 50 1 0.1 0.01 t a = ? 55 c t a = 25 c i c /i b = 100 0.001 0.01 0.1 1 10 v ce(sat) , collector ? emitter saturation voltage (v) v ce(sat) , collector ? emitter saturation voltage (v) figure 3. dc current gain versus collector current figure 4. base emitter saturation voltage versus collector current figure 5. base emitter turn ? on voltage versus collector current figure 6. capacitance i c , collector current (a) i c , collector current (a) v r , reverse voltage (v) 1000 t a = ? 55 c t a = 25 c v ce = 1.5 v 0.001 0.01 0.1 1 10 h fe , dc current gain 100 10 t a = 150 c t a = ? 55 c t a = 25 c t a = 150 c i c , collector current (a) 1.1 0.001 0.01 0.1 1 10 v be(sat) , base ? emitter saturation voltage (v) 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 i c /i b = 100 1.2 0.001 0.01 0.1 1 10 v be(on) , base ? emitter on voltage (v) 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 t a = ? 55 c t a = 25 c v ce = 3 v t a = 150 c 1000 0.1 1 10 c, capacitance (pf) 100 10 c ibo c obo
nss35200mr6t1g http://onsemi.com 5 v ce , collector-emitter voltage (volts) 10 i c 0.01 0.1 1.0 10 100 0.1 1.0 , collector current (amps) 100 s 1 ms 10 ms 100 ms 1 s dc single pulse at t amb = 25 c figure 7. safe operating area 0.1 figure 8. normalized thermal response t, time (sec) 1.0 0.001 0.01 0.00001 0.01 0.1 1.0 100 1000 0.1 0.0001 0.001 10 r(t), normalized transient thermal d = 0.5 0.02 0.05 0.2 0.01 single pulse resistance
nss35200mr6t1g http://onsemi.com 6 package dimensions ? 6 case 318g ? 02 issue v 23 4 5 6 d 1 e b e1 a1 a 0.05 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e1 do not include mold flash, protrusions, or gate burrs. mold flash, protrusions, or gate burrs shall not exceed 0.15 per side. dimensions d and e1 are determined at datum h. 5. pin one indicator must be located in the indicated zone. c *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* dim a min nom max millimeters 0.90 1.00 1.10 a1 0.01 0.06 0.10 b 0.25 0.38 0.50 c 0.10 0.18 0.26 d 2.90 3.00 3.10 e 2.50 2.75 3.00 e 0.85 0.95 1.05 l 0.20 0.40 0.60 0.25 bsc l2 ? 0 1 0 1.30 1.50 1.70 e1 e recommended note 5 l c m h l2 seating plane gauge plane detail z detail z 0.60 6x 3.20 0.95 6x 0.95 pitch dimensions: millimeters m style 6: pin 1. collector 2. collector 3. base 4. emitter 5. collector 6. collector on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 nss35200mr6/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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